BAT54ALT1G Schottky Diode Array: High-Performance Solution for Your Electronics Needs

The BAT54ALT1G from onsemi is a cutting-edge Schottky diode array designed for modern electronic applications requiring efficiency, reliability, and compact design. As part of the Discrete Semiconductor Products category, this diode array excels in small-signal rectification, power management, and high-speed switching. Below, we explore its features, benefits, and applications to help you make an informed decision for your next project.

Why Choose the BAT54ALT1G Schottky Diode Array?

Engineers and designers prefer the BAT54ALT1G for its low forward voltage drop, fast switching speed, and compact SOT-23-3 package. Manufactured by onsemi, a global leader in semiconductor solutions, this diode array guarantees top-tier performance in demanding environments.

Key Features and Specifications

• Diode Configuration: 1 Pair Common Anode
• Maximum Reverse Voltage (Vr): 30V
• Average Rectified Current (Io): 200mA per diode
• Forward Voltage (Vf): 800mV @ 100mA
• Reverse Recovery Time (trr): 5ns (ultra-fast switching)
• Operating Temperature: -55 C to 150 C
• Package: SOT-23-3 (TO-236-3), surface-mount

Performance Advantages

The BAT54ALT1G stands out due to its Schottky barrier technology, which ensures minimal power loss and heat dissipation. Its 5ns reverse recovery time makes it ideal for high-frequency circuits, while the 30V reverse voltage rating provides robust protection in voltage-sensitive applications.

Applications of BAT54ALT1G

This versatile diode array is widely used in:

• Power Management: Voltage clamping, reverse polarity protection, and DC-DC converters.
• Signal Processing: High-speed data communication, RF modules, and logic circuits.
• Consumer Electronics: Smartphones, wearables, and IoT devices where space and efficiency are critical.
• Industrial Systems: Motor control, sensors, and automation equipment requiring reliable diode performance.

Technical Deep Dive

1. Low Forward Voltage Drop (800mV @ 100mA)

The BAT54ALT1G's Schottky design ensures a lower forward voltage compared to standard PN-junction diodes, reducing energy loss and improving efficiency in low-voltage circuits.

2. Ultra-Fast Switching (5ns trr)

With a reverse recovery time of just 5 nanoseconds, this diode minimizes switching losses in high-frequency applications like switching power supplies and RF detectors.

3. High Temperature Tolerance (-55 C to 150 C)

Engineered for reliability, the BAT54ALT1G operates flawlessly in extreme conditions, making it suitable for automotive, aerospace, and industrial applications.

Comparison with Competing Diodes

Compared to similar diodes (e.g., BAT54C or 1N5819), the BAT54ALT1G offers:

• Smaller footprint (SOT-23-3 vs. SOD-123).
• Faster switching (5ns vs. 10+ ns).
• Lower leakage current (2 A @ 25V vs. 5 A).

Design Considerations

When integrating the BAT54ALT1G into your PCB:

• Ensure proper heat dissipation for high-current applications.
• Use a 10-100nF bypass capacitor near the diode for noise suppression.
• Follow onsemi's layout guidelines for optimal performance.

Where to Buy

The BAT54ALT1G is available at major distributors like Digi-Key, Mouser, and LCSC. For bulk orders, contact onsemi directly for competitive pricing.

Conclusion

The BAT54ALT1G Schottky diode array is a superior choice for engineers seeking a balance of speed, efficiency, and compactness. Its advanced features and onsemi's reputation for quality make it a go-to component for modern electronics. Search for BAT54ALT1G datasheet or buy BAT54ALT1G online to start optimizing your designs today!