CY62256NLL-55SNXIT: Alliance Memory's High-Performance 256Kb SRAM for Demanding Applications

In today's fast-paced electronics landscape, engineers require memory solutions that deliver uncompromising speed, reliability, and power efficiency. The CY62256NLL-55SNXIT from Alliance Memory, Inc. emerges as a standout choice, offering exceptional performance in a compact package. This comprehensive guide explores why this 256Kb SRAM is becoming the go-to solution for industrial, telecommunications, and embedded systems worldwide.

In-Depth Technical Specifications

Memory Architecture

The CY62256NLL-55SNXIT features a 32K x 8-bit organization, providing flexible byte-wide access that's ideal for 8-bit and 16-bit microcontroller systems. Unlike DRAM that requires constant refreshing, this static RAM maintains data integrity without refresh cycles, simplifying system design.

Blazing-Fast Performance

With an access time of just 55ns and equal write cycle time, this memory IC enables:

• Real-time data processing in industrial controllers
• Seamless buffering in network switches
• Instantaneous response in medical monitoring equipment

Robust Power Characteristics

The 4.5V to 5.5V operating range ensures compatibility with both 5V systems and designs with moderate voltage fluctuations. Advanced CMOS technology provides:

• Low active current (typically 40mA at 55ns)
• Standby current as low as 10 A with CMOS input levels
• Automatic power-down when deselected

Extended Reliability Features

Industrial-Grade Durability

The -40 C to +85 C operational temperature range makes this SRAM suitable for:

• Outdoor telecommunications equipment
• Automotive control systems
• Industrial automation in harsh environments

Advanced Packaging

The 28-pin SOIC package (7.5mm width) offers:

• Space-efficient PCB footprint
• Improved thermal performance over DIP packages
• Compatibility with automated SMT assembly processes

Comparative Advantages

When benchmarked against similar SRAM solutions, the CY62256NLL-55SNXIT demonstrates:

Feature	CY62256NLL-55SNXIT	Competitor A	Competitor B
Access Time	55ns	70ns	60ns
Voltage Range	4.5-5.5V	4.75-5.25V	4.5-5.5V
Temp Range	-40 C to +85 C	0 C to +70 C	-40 C to +85 C
Standby Current	10 A (typ)	20 A	15 A

Application-Specific Implementations

Industrial Control Systems

In PLCs and motor controllers, the CY62256NLL-55SNXIT provides:

• Deterministic access for real-time control loops
• Data retention during brief power interruptions
• Reliable operation in electrically noisy environments

Telecommunications Infrastructure

For 5G base stations and network switches, this SRAM delivers:

• Low-latency packet buffering
• Error-free operation in temperature-fluctuating enclosures
• Long-term availability crucial for telecom deployments

Design Integration Guidelines

PCB Layout Recommendations

To maximize performance:

• Place decoupling capacitors within 5mm of VCC pin
• Route address/data lines with matched lengths
• Maintain 50 impedance for high-speed traces

Signal Integrity Considerations

The parallel interface benefits from:

• Series termination resistors (22 typical) on control lines
• Proper ground return paths for each signal group
• Minimized trace lengths (<10cm) for critical signals

Purchasing and Support

Alliance Memory offers this SRAM in multiple packaging options including tape-and-reel for high-volume production. The device is:

• RoHS compliant for global deployment
• Backed by comprehensive technical documentation
• Supported by a 10-year longevity commitment

For engineers seeking a reliable, high-speed memory solution, the CY62256NLL-55SNXIT represents an optimal balance of performance, durability, and cost-effectiveness. Its combination of 55ns access time, industrial temperature range, and low-power operation makes it uniquely suited for today's most challenging electronic designs.