NTGD4167CT1G: Dual N and P-Channel MOSFET - Features, Specs & Applications
NTGD4167CT1G: Dual N and P-Channel MOSFET in Compact 6-TSOP Package by onsemi
The NTGD4167CT1G from onsemi is a high-efficiency dual-channel MOSFET designed for modern power management and switching applications. Combining both N-Channel and P-Channel MOSFETs in a single 6-TSOP package, this device offers exceptional performance, thermal management, and space-saving benefits. Below, we explore its features, technical specifications, and real-world applications to help engineers optimize their designs.
What is the NTGD4167CT1G?
The NTGD4167CT1G is part of onsemi's lineup of advanced MOSFET arrays, classified under Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays. It integrates both N-Channel and P-Channel MOSFETs, making it ideal for applications requiring bidirectional switching, voltage translation, or compact power solutions.
Key Features and Benefits
1. Dual N and P-Channel Integration
- Simplifies circuit design by eliminating the need for separate N and P-Channel MOSFETs.
- Reduces PCB footprint, making it perfect for space-constrained applications like portable electronics and IoT devices.
2. Logic-Level Gate Compatibility
- Operates with gate voltages as low as 1.5V, allowing direct control from microcontrollers or logic ICs.
- Eliminates the need for additional gate drivers, reducing BOM cost and complexity.
3. High Voltage and Current Handling
- 30V Drain-to-Source Voltage (Vdss): Supports automotive and industrial voltage levels.
- 2.6A (N-Channel) / 1.9A (P-Channel) Continuous Drain Current: Ensures robust performance in power-switching applications.
4. Ultra-Low On-Resistance
- Rds(on) as low as 90mOhm at 4.5V Vgs minimizes conduction losses, improving energy efficiency.
- Enables higher power density in designs such as DC-DC converters and motor drivers.
5. Fast Switching Performance
- Gate Charge (Qg) of 5.5nC and Input Capacitance (Ciss) of 295pF ensure rapid turn-on/off times.
- Ideal for high-frequency switching applications like PWM controllers and LED drivers.
6. Thermal and Environmental Resilience
- 900mW Power Dissipation and -55 C to 150 C Operating Range ensure reliability in harsh conditions.
- RoHS-compliant and halogen-free for eco-friendly designs.
Technical Specifications
| Parameter | Value |
|---|---|
| Configuration | Dual N and P-Channel |
| Package | 6-TSOP (SOT-23-6 Thin) |
| Vdss (Max) | 30V |
| Id (N-Channel) | 2.6A @ 25 C |
| Id (P-Channel) | 1.9A @ 25 C |
| Rds(on) (Max) | 90mOhm @ 4.5V Vgs |
| Vgs(th) | 1.5V (Typical) |
| Qg | 5.5nC @ 4.5V Vgs |
| Ciss | 295pF @ 15V Vds |
| Power Dissipation | 900mW |
| Operating Temperature | -55 C to 150 C |
Applications
The NTGD4167CT1G is widely used in:
- Load Switching: Power distribution in USB-C ports, battery-powered devices.
- Level Shifting: Bridging 3.3V and 5V logic systems in mixed-voltage designs.
- Motor Control: Driving small brushed DC motors in robotics and appliances.
- Battery Management: Protection circuits in Li-ion/LiPo battery packs.
- Signal Routing: Analog/digital multiplexing in test equipment.
Design Considerations
- PCB Layout: Use short traces to minimize parasitic inductance in high-speed switching paths.
- Thermal Management: Ensure adequate copper pour or heatsinking for sustained high-current operation.
- Gate Drive: A 4.5V-10V Vgs is recommended for optimal Rds(on) performance.
Why Choose NTGD4167CT1G?
Engineers prefer the NTGD4167CT1G for its:
- Space Efficiency: Dual MOSFETs in a 6-TSOP package save up to 50% board space vs. discrete solutions.
- Cost-Effectiveness: Reduces component count and assembly costs.
- Reliability: onsemi's quality assurance ensures long-term performance.
Where to Buy
Purchase the NTGD4167CT1G from authorized distributors like Digi-Key, Mouser, or directly from onsemi's e-commerce platform. Volume pricing and samples are available for qualified projects.
Conclusion
The NTGD4167CT1G is a versatile, high-performance dual MOSFET solution for modern electronics. Its combination of low Rds(on), logic-level drive, and compact packaging makes it indispensable for power-efficient designs. Whether you're developing IoT devices, automotive systems, or industrial controls, this MOSFET array delivers the performance and reliability needed to succeed.