STW26NM60N MOSFET N-Channel 600V 20A: High-Performance Power Transistor by STMicroelectronics
STW26NM60N MOSFET N-Channel 600V 20A: High-Performance Power Transistor by STMicroelectronics
The STW26NM60N from STMicroelectronics is a premium N-Channel MOSFET designed for high-efficiency power management applications. With a 600V drain-source voltage (Vdss) and 20A continuous current (Id), this MOSFET delivers exceptional performance in demanding environments. Its advanced design ensures low power dissipation, high switching speed, and reliable operation, making it a top choice for engineers and designers worldwide.
Why Choose the STW26NM60N MOSFET?
The STW26NM60N stands out in the competitive power electronics market due to its superior electrical and thermal characteristics. Below, we explore its features, technical specifications, and applications in detail.
Key Features and Benefits
- High Voltage and Current Handling: Supports up to 600V and 20A, making it ideal for high-power applications like industrial motor drives and inverters.
- Ultra-Low On-Resistance: With Rds(on) as low as 165m @ 10V, it minimizes conduction losses, improving system efficiency.
- Fast Switching Performance: Optimized gate charge (Qg: 60nC) ensures quick turn-on/off, reducing switching losses in high-frequency circuits.
- Thermal Efficiency: The TO-247-3 package enhances heat dissipation, allowing operation up to 150 C.
- Reliability: Manufactured by STMicroelectronics, a leader in semiconductor technology, ensuring high-quality and long-term durability.
Detailed Technical Specifications
Electrical Parameters
- FET Type: N-Channel Enhancement Mode
- Drain-Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 20A @ 25 C
- Pulsed Drain Current (Idm): 80A
- Gate Threshold Voltage (Vgs(th)): 2V to 4V
- Input Capacitance (Ciss): 1800pF @ 50V
- Total Gate Charge (Qg): 60nC @ 10V
Mechanical and Thermal Properties
- Package Type: TO-247-3 (Through-Hole)
- Power Dissipation (Pd): 140W
- Operating Temperature Range: -55 C to +150 C
Applications of STW26NM60N
This MOSFET is widely used in:
- Switched-Mode Power Supplies (SMPS): Enhances efficiency in AC-DC and DC-DC converters.
- Motor Control Systems: Drives brushed/brushless motors in industrial and automotive applications.
- Solar Inverters: Supports high-voltage DC-AC conversion in renewable energy systems.
- Uninterruptible Power Supplies (UPS): Ensures reliable power delivery during outages.
Comparison with Competing MOSFETs
The STW26NM60N outperforms similar devices like IRFP460 or FQP27P06 with its lower Rds(on), higher voltage rating, and better thermal management. Its 60nC gate charge also makes it more suitable for high-frequency designs.
Design Considerations
For optimal performance:
- Use a gate driver IC (e.g., STDRIVEG600) to ensure fast switching.
- Implement proper heatsinking (thermal resistance < 1.5 C/W) for high-current applications.
- Follow STMicroelectronics layout guidelines to minimize parasitic inductance.
Where to Buy
The STW26NM60N is available at major distributors like Digi-Key, Mouser, and RS Components. Check stock and pricing for bulk orders.
Conclusion
The STW26NM60N is a versatile, high-performance MOSFET that combines 600V breakdown voltage, 20A current capability, and industry-leading efficiency. Whether you're upgrading a power supply or designing a new motor controller, this component delivers reliability and performance. Order yours today to elevate your power electronics projects!
Pro Tip: Pair this MOSFET with ST s STGAP2S gate driver for enhanced switching performance.