03N06
Goford Semiconductor
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the 03N06 by Goford Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the 03N06 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 30 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Renesas Electronics America Inc
UPA2702TP-E1-AZ
Diodes Incorporated
DMTH6002LPSWQ-13
onsemi
NTHL185N60S5H
onsemi
NVMFS4C310NWFT1G
onsemi
NVMFWS015N10MCLT1G
Fairchild Semiconductor
FDMS0352S
Diodes Incorporated
DMN3009SFGQ-13
Renesas Electronics America Inc
UPA2201UT1M-T1-AT
Toshiba Semiconductor and Storage
TK5A80E,S4X
Diodes Incorporated