0910-60M
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1GHZ 55AW
$0.00
Available to order
Reference Price (USD)
10+
$340.11800
Exquisite packaging
Discount
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The 0910-60M RF Bipolar Junction Transistor (BJT) by Microsemi Corporation is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the 0910-60M is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Microsemi Corporation for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 890MHz ~ 1GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB ~ 8.5dB
- Power - Max: 180W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 8A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55AW
- Supplier Device Package: 55AW
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