1014-12
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 50V 1.4GHZ 55LT
$0.00
Available to order
Reference Price (USD)
50+
$180.10220
Exquisite packaging
Discount
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Discover the 1014-12, a cutting-edge RF Bipolar Junction Transistor (BJT) from Microsemi Corporation, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The 1014-12 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Microsemi Corporation for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 50V
- Frequency - Transition: 1GHz ~ 1.4GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6.8dB
- Power - Max: 39W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
- Current - Collector (Ic) (Max): 5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55LT
- Supplier Device Package: 55LT
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