19MT050XF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
MOSFET 4N-CH 500V 31A MTP
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The 19MT050XF by Vishay General Semiconductor - Diodes Division is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the 19MT050XF provides reliable operation under stringent conditions. Vishay General Semiconductor - Diodes Division's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 31A
- Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 25V
- Power - Max: 1140W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 16-MTP Module
- Supplier Device Package: 16-MTP
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