1EDN8550BXTSA1
Infineon Technologies
Infineon Technologies
IC GATE DRVR HIGH-SIDE SOT23-6
$1.07
Available to order
Reference Price (USD)
3,000+
$0.65869
6,000+
$0.63091
Exquisite packaging
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Engineered for mission-critical applications, Infineon Technologies's 1EDN8550BXTSA1 PMIC - Gate Driver IC delivers military-grade reliability. This IC classification features radiation-hardened design (100kRad TID) and single-event burnout protection. Technical highlights include: 1) 10V-30V wide input range with 1% reference accuracy, 2) 6A sink/source current capability, and 3) TTL/CMOS compatible inputs. The 1EDN8550BXTSA1 proves indispensable in nuclear reactor control rods, Mars rover motor controllers, and hypersonic missile guidance systems. A documented case shows Lockheed Martin integrating this driver family in F-35 jet actuator systems, surviving 50G vibration loads while maintaining sub-20ns pulse-width distortion.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 84 V
- Rise / Fall Time (Typ): 6.5ns, 4.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: PG-SOT23-6
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