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1HN04CH-TL-W

onsemi
1HN04CH-TL-W Preview
onsemi
MOSFET N-CH 100V 270MA 3CPH
$0.60
Available to order
Reference Price (USD)
3,000+
$0.24699
6,000+
$0.23186
15,000+
$0.21672
30,000+
$0.20612
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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