1N1190A
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN PURP 600V 40A DO5
$11.35
Available to order
Reference Price (USD)
1+
$11.89000
10+
$10.70400
100+
$8.80100
500+
$7.37378
1,000+
$6.66019
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 1N1190A from GeneSiC Semiconductor is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. GeneSiC Semiconductor's dedication to quality means the 1N1190A meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 190°C
Related Products
Renesas Electronics America Inc
HSM123JTR
Microchip Technology
JANS1N5811US/TR
Sanyo
1SS350-TB-E
Vishay General Semiconductor - Diodes Division
VS-4EWH02FNHM3
Microchip Technology
1N6622
Vishay General Semiconductor - Diodes Division
GP02-30-E3/54
Taiwan Semiconductor Corporation
1N914B A0G
NTE Electronics, Inc
1N5061
Taiwan Semiconductor Corporation
SFAS806G
Vishay General Semiconductor - Diodes Division