1N1206A
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN PURP 600V 12A DO4
$4.23
Available to order
Reference Price (USD)
500+
$4.10428
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 1N1206A by GeneSiC Semiconductor is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The 1N1206A is also used in smart home devices and wearable technology, ensuring seamless operation. GeneSiC Semiconductor's expertise in semiconductor technology guarantees that the 1N1206A delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 200°C
Related Products
Vishay General Semiconductor - Diodes Division
S3K-M3/9AT
Vishay General Semiconductor - Diodes Division
VS-70HF20
SMC Diode Solutions
FR103G
Vishay General Semiconductor - Diodes Division
VS-MBRS130L-M3/5BT
Rohm Semiconductor
RB521VM-30FHTE-17
Comchip Technology
1N5400T-G
Nexperia USA Inc.
PMEG4005CEAX
Panjit International Inc.
SB340LS_AY_00001
Microchip Technology
JAN1N5415/TR
onsemi