1N5257B-TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 33V 500MW DO35
$0.19
Available to order
Reference Price (USD)
30,000+
$0.02436
Exquisite packaging
Discount
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The 1N5257B-TAP Zener diode from Vishay General Semiconductor - Diodes Division is a top choice in the Discrete Semiconductor Products category. This single Zener diode is engineered for superior voltage regulation, with features like high power dissipation and low leakage current. It is ideal for applications in telecommunications, where it stabilizes voltage levels in base stations and network equipment. The 1N5257B-TAP is also used in automotive systems, protecting electronic control units from voltage spikes. Additionally, it finds applications in industrial power supplies, ensuring consistent performance in harsh environments. Its reliability and efficiency make it a preferred component in both commercial and industrial electronics.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 33 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 58 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 25 V
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
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