Shopping cart

Subtotal: $0.00

1N5401G B0G

Taiwan Semiconductor Corporation
1N5401G B0G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
$0.00
Available to order
Reference Price (USD)
14,000+
$0.07168
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Nexperia USA Inc.

BAT760/6F

Taiwan Semiconductor Corporation

S1J-JR2

Vishay General Semiconductor - Diodes Division

GP08JHE3/73

Taiwan Semiconductor Corporation

SS22L MQG

Vishay General Semiconductor - Diodes Division

15TQ060STRL

Taiwan Semiconductor Corporation

FR156G B0G

Micro Commercial Co

GPA801-BP

Vishay General Semiconductor - Diodes Division

VS-15ETX06-1PBF

Vishay General Semiconductor - Diodes Division

SS29HE3/5BT

Taiwan Semiconductor Corporation

SRAF1030HC0G

Top