Shopping cart

Subtotal: $0.00

1N5619GP-E3/73

Vishay General Semiconductor - Diodes Division
1N5619GP-E3/73 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO201AD
$0.00
Available to order
Reference Price (USD)
6,000+
$0.12772
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 600 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Taiwan Semiconductor Corporation

1N4007GHB0G

Central Semiconductor Corp

1N4006 TR

Panasonic Electronic Components

DA3S101K0L

Diodes Incorporated

ES1B-13

Diodes Incorporated

PR1505S-A

Taiwan Semiconductor Corporation

SRT13 R0G

Infineon Technologies

D721S35TXPSA1

Diodes Incorporated

SBL1060

Taiwan Semiconductor Corporation

RS1DL R3G

Top