Shopping cart

Subtotal: $0.00

1N5806E3/TR

Microchip Technology
1N5806E3/TR Preview
Microchip Technology
UFR,FRR
$5.92
Available to order
Reference Price (USD)
1+
$5.92500
500+
$5.86575
1000+
$5.8065
1500+
$5.74725
2000+
$5.688
2500+
$5.62875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 150 V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

SE80PWJ-M3/I

Comchip Technology

RS5DC-HF

Microchip Technology

1N5811E3

Panjit International Inc.

BAS16TS_R1_00001

Powerex Inc.

R7011203XXUA

GeneSiC Semiconductor

MUR7005

Microchip Technology

1N5811E3/TR

Micro Commercial Co

FS1B-LTP

Top