1N5818
NTE Electronics, Inc
NTE Electronics, Inc
R-SCHOTTKY 30V 1A
$0.28
Available to order
Reference Price (USD)
5,000+
$0.08051
10,000+
$0.07199
25,000+
$0.06773
50,000+
$0.06347
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the 1N5818 single rectifier diode from NTE Electronics, Inc. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the 1N5818 delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. NTE Electronics, Inc's 1N5818 is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 30 V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 125°C
Related Products
Taiwan Semiconductor Corporation
FR154GH
onsemi
NRVB140ESFT3G
Vishay General Semiconductor - Diodes Division
VS-3EJH01HM3/6A
Vishay General Semiconductor - Diodes Division
VBT760-E3/4W
MDD
FR107-T/B
Micro Commercial Co
BAT54WS-TP
PN Junction Semiconductor
P3D06010I2
Vishay General Semiconductor - Diodes Division
UG4C-M3/73
Vishay General Semiconductor - Diodes Division
UF5406-E3/73
Taiwan Semiconductor Corporation