1N6479HE3/96
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO213AB
$0.13
Available to order
Reference Price (USD)
6,000+
$0.14062
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with the 1N6479HE3/96 single rectifier diode from Vishay General Semiconductor - Diodes Division. This diode, part of the Discrete Semiconductor Products family, offers exceptional rectification efficiency and thermal stability. Its compact design and high current capacity make it suitable for space-constrained applications like mobile devices, laptops, and IoT gadgets. The 1N6479HE3/96 is also ideal for automotive electronics, including alternators and voltage regulators, where reliability is critical. Vishay General Semiconductor - Diodes Division's commitment to innovation ensures that the 1N6479HE3/96 meets the highest industry standards for performance and longevity.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Microchip Technology
JANS1N6620US/TR
Nexperia USA Inc.
1PS79SB40,699
onsemi
1N914TR
Vishay General Semiconductor - Diodes Division
S5J-E3/9AT
Diodes Incorporated
RS3M-13-F
Diodes Incorporated
RS3D-13-F
Diotec Semiconductor
BY550-100
Diotec Semiconductor
P600B-CT
Vishay General Semiconductor - Diodes Division
BYT54J-TR
Vishay General Semiconductor - Diodes Division