1N6622US
Microchip Technology
Microchip Technology
DIODE GEN PURP 660V 1.2A A-MELF
$8.34
Available to order
Reference Price (USD)
109+
$8.49147
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 1N6622US from Microchip Technology is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Microchip Technology's dedication to quality means the 1N6622US meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 660 V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 660 V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Operating Temperature - Junction: -65°C ~ 150°C
Related Products
Panjit International Inc.
SV1040_R1_00001
Panjit International Inc.
MBR3045_T0_00001
Rohm Semiconductor
RB160MM-40TFTR
Microchip Technology
JANTX1N5711UR-1
Diotec Semiconductor
M5
Vishay General Semiconductor - Diodes Division
SS26HM3_A/H
Global Power Technology-GPT
G3S06550P
Panjit International Inc.
MB1H60AL-AU_R1_000A1
SMC Diode Solutions
S3D15065A
Vishay General Semiconductor - Diodes Division