1N8026-GA
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SILICON 1.2KV 8A TO257
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Enhance your circuit performance with the 1N8026-GA single rectifier diode from GeneSiC Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the 1N8026-GA delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. GeneSiC Semiconductor's 1N8026-GA is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Obsolete
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
- Capacitance @ Vr, F: 237pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-257-3
- Supplier Device Package: TO-257
- Operating Temperature - Junction: -55°C ~ 250°C
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