1N8030-GA
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 650V 750MA TO257
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Discover the 1N8030-GA single rectifier diode by GeneSiC Semiconductor, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The 1N8030-GA is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose GeneSiC Semiconductor's 1N8030-GA for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Obsolete
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 750mA
- Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 750 mA
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 650 V
- Capacitance @ Vr, F: 76pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-257-3
- Supplier Device Package: TO-257
- Operating Temperature - Junction: -55°C ~ 250°C
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