1N8031-GA
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 650V 1A TO276
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The 1N8031-GA single rectifier diode by GeneSiC Semiconductor is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The 1N8031-GA is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. GeneSiC Semiconductor's 1N8031-GA is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Obsolete
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 650 V
- Capacitance @ Vr, F: 76pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-276AA
- Supplier Device Package: TO-276
- Operating Temperature - Junction: -55°C ~ 250°C
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