1SS193,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SMINI
$0.23
Available to order
Reference Price (USD)
3,000+
$0.03680
6,000+
$0.03200
15,000+
$0.02720
30,000+
$0.02560
75,000+
$0.02400
150,000+
$0.02240
Exquisite packaging
Discount
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The 1SS193,LF by Toshiba Semiconductor and Storage is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The 1SS193,LF is also used in smart home devices and wearable technology, ensuring seamless operation. Toshiba Semiconductor and Storage's expertise in semiconductor technology guarantees that the 1SS193,LF delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 80 V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
- Operating Temperature - Junction: 125°C (Max)
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