1SS307E,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SC79
$0.21
Available to order
Reference Price (USD)
8,000+
$0.02990
16,000+
$0.02600
24,000+
$0.02340
56,000+
$0.02080
200,000+
$0.01820
Exquisite packaging
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Optimize your electronic designs with the 1SS307E,L3F single rectifier diode from Toshiba Semiconductor and Storage. This diode, part of the Discrete Semiconductor Products family, offers exceptional rectification efficiency and thermal stability. Its compact design and high current capacity make it suitable for space-constrained applications like mobile devices, laptops, and IoT gadgets. The 1SS307E,L3F is also ideal for automotive electronics, including alternators and voltage regulators, where reliability is critical. Toshiba Semiconductor and Storage's commitment to innovation ensures that the 1SS307E,L3F meets the highest industry standards for performance and longevity.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 nA @ 80 V
- Capacitance @ Vr, F: 6pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SC-79
- Operating Temperature - Junction: 150°C (Max)
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