23A025
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 22V 3.7GHZ 55BT
$0.00
Available to order
Reference Price (USD)
50+
$140.23180
Exquisite packaging
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The 23A025 RF Bipolar Junction Transistor (BJT) by Microsemi Corporation is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the 23A025 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Microsemi Corporation for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 22V
- Frequency - Transition: 3.7GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB ~ 6.3dB
- Power - Max: 9W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 420mA, 5V
- Current - Collector (Ic) (Max): 1.2A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55BT
- Supplier Device Package: 55BT
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