2DB1182Q-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 32V 2A TO252-3
$0.48
Available to order
Reference Price (USD)
2,500+
$0.15074
5,000+
$0.14255
12,500+
$0.13436
25,000+
$0.12480
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2DB1182Q-13 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2DB1182Q-13 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
- Power - Max: 10 W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-3
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