2EDN7524GXTMA1
Infineon Technologies
Infineon Technologies
IC GATE DRVR LOW-SIDE 8WSON
$1.45
Available to order
Reference Price (USD)
4,000+
$0.72897
Exquisite packaging
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The 2EDN7524GXTMA1 from Infineon Technologies redefines compact power management as a space-optimized PMIC - Gate Driver IC. Measuring just 3x3mm QFN, this classification achieves 5kV reinforced isolation through innovative transformer coupling technology. Signature features are: 1) 50% lower quiescent current than industry average, 2) 3.3V/5V logic level translation, and 3) Lead-free/RoHS 3.0 compliance. Consumer electronics particularly benefit in wireless charging pads (Qi 1.3 standard), drone ESC modules, and VR headset power circuits. Real-world testing demonstrates the 2EDN7524GXTMA1 enabling 95W USB-PD adapters at 30W/in power density - a key enabler for Apple's MagSafe ecosystem.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 5.3ns, 4.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: PG-WSON-8-1
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