2N1131L
Microchip Technology
Microchip Technology
POWER BJT
$25.58
Available to order
Reference Price (USD)
1+
$25.57500
500+
$25.31925
1000+
$25.0635
1500+
$24.80775
2000+
$24.552
2500+
$24.29625
Exquisite packaging
Discount
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The 2N1131L Bipolar Junction Transistor (BJT) by Microchip Technology is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2N1131L provides consistent performance in demanding applications. Choose Microchip Technology for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
- Power - Max: 600 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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