2N3497
Microchip Technology
Microchip Technology
SMALL-SIGNAL BJT
$32.40
Available to order
Reference Price (USD)
1+
$32.40000
500+
$32.076
1000+
$31.752
1500+
$31.428
2000+
$31.104
2500+
$30.78
Exquisite packaging
Discount
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Discover the 2N3497, a cutting-edge RF Bipolar Junction Transistor (BJT) from Microchip Technology, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The 2N3497 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Microchip Technology for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 120V
- Frequency - Transition: 150MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: -
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