2N3904PH
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
TRANS NPN 40V 0.2A TO92-3
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Optimize your electronic systems with the 2N3904PH Bipolar Junction Transistor (BJT) from Vishay General Semiconductor - Diodes Division. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N3904PH delivers superior performance in diverse environments. Vishay General Semiconductor - Diodes Division's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 625 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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