2N3960UB
Microsemi Corporation
Microsemi Corporation
TRANS NPN 12V UB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N3960UB Bipolar Junction Transistor (BJT) by Microsemi Corporation is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2N3960UB provides consistent performance in demanding applications. Choose Microsemi Corporation for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
- Power - Max: 400 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
Related Products
onsemi
BF423G
onsemi
2N6427_D75Z
Fairchild Semiconductor
KSA1201YTF
Micro Commercial Co
2SC2859-GR-TP
STMicroelectronics
STSA851
Diodes Incorporated
MMBT4124-7
Panasonic Electronic Components
2SB09680RL
Toshiba Semiconductor and Storage
2SC3668-Y,T2WNLF(J
Infineon Technologies
BCX54-10
Panasonic Electronic Components