2N3997
Microchip Technology
Microchip Technology
POWER BJT
$263.18
Available to order
Reference Price (USD)
1+
$263.17500
500+
$260.54325
1000+
$257.9115
1500+
$255.27975
2000+
$252.648
2500+
$250.01625
Exquisite packaging
Discount
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The 2N3997 Bipolar Junction Transistor (BJT) by Microchip Technology is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2N3997 provides consistent performance in demanding applications. Choose Microchip Technology for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
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