2N4401,116
NXP USA Inc.
NXP USA Inc.
TRANS NPN 40V 0.6A TO92-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the 2N4401,116 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N4401,116 delivers superior performance in diverse environments. NXP USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 630 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
Panasonic Electronic Components
DSC9A01T0L
NXP USA Inc.
BF421,112
Rohm Semiconductor
2SC5865TLR
onsemi
MPS6727G
Infineon Technologies
MMBTA56LT1
NXP USA Inc.
BC517,112
onsemi
BC327-25ZL1
Diodes Incorporated
FZT851TC
Panasonic Electronic Components
2SA1535AR
Toshiba Semiconductor and Storage