2N4998
Microchip Technology
Microchip Technology
POWER BJT
$311.82
Available to order
Reference Price (USD)
1+
$311.82000
500+
$308.7018
1000+
$305.5836
1500+
$302.4654
2000+
$299.3472
2500+
$296.229
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the 2N4998 Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2N4998 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Microchip Technology to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 35 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
Related Products
onsemi
2SC4403-3-TL-E
Microchip Technology
JANSM2N2221AUB/TR
Microchip Technology
2N2369AU
Microchip Technology
JANSF2N2907AL
Sanyo
2SA1824S-AY
Microsemi Corporation
2N2221AL
Microchip Technology
2N3440UA
Diodes Incorporated
ZXT951KQTC
Central Semiconductor Corp
BCX23 PBFREE
Microchip Technology