2N5011U4
Microchip Technology
Microchip Technology
POWER BJT
$90.21
Available to order
Reference Price (USD)
1+
$90.21000
500+
$89.3079
1000+
$88.4058
1500+
$87.5037
2000+
$86.6016
2500+
$85.6995
Exquisite packaging
Discount
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The 2N5011U4 Bipolar Junction Transistor (BJT) from Microchip Technology is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2N5011U4 is a reliable component for demanding applications. Microchip Technology's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 25mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
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