2N5012S
Microsemi Corporation
Microsemi Corporation
TRANS NPN 700V 0.2A TO39
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Enhance your circuit designs with the 2N5012S Bipolar Junction Transistor (BJT) from Microsemi Corporation. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2N5012S is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Microsemi Corporation to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 700 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 5mA, 25mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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