2N5109
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 20V 1.2GHZ TO39
$0.00
Available to order
Reference Price (USD)
1+
$3.18000
10+
$2.83500
25+
$2.55160
100+
$2.32470
250+
$2.09792
500+
$1.88244
1,000+
$1.58760
2,500+
$1.51200
Exquisite packaging
Discount
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Discover the 2N5109, a cutting-edge RF Bipolar Junction Transistor (BJT) from Microsemi Corporation, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The 2N5109 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Microsemi Corporation for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.2GHz
- Noise Figure (dB Typ @ f): -
- Gain: 12dB
- Power - Max: 2.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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