2N5210BU
onsemi
onsemi
2N5210 - SMALL SIGNAL BIPOLAR TR
$0.02
Available to order
Reference Price (USD)
1+
$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
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The 2N5210BU Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2N5210BU provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 30MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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