2N5306 TIN/LEAD
Central Semiconductor Corp
Central Semiconductor Corp
TRANS NPN DARL 25V 0.3A TO92-3
$0.29
Available to order
Reference Price (USD)
1+
$0.29205
500+
$0.2891295
1000+
$0.286209
1500+
$0.2832885
2000+
$0.280368
2500+
$0.2774475
Exquisite packaging
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Experience unmatched performance with the 2N5306 TIN/LEAD Bipolar Junction Transistor (BJT) by Central Semiconductor Corp. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2N5306 TIN/LEAD delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Central Semiconductor Corp for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 60MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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