2N5619
Microchip Technology
Microchip Technology
POWER BJT
$71.28
Available to order
Reference Price (USD)
1+
$71.28000
500+
$70.5672
1000+
$69.8544
1500+
$69.1416
2000+
$68.4288
2500+
$67.716
Exquisite packaging
Discount
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Experience unmatched performance with the 2N5619 Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2N5619 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Microchip Technology for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 2.5mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 58 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: -
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