2N5660U3
Microchip Technology
Microchip Technology
POWER BJT
$93.84
Available to order
Reference Price (USD)
1+
$93.84000
500+
$92.9016
1000+
$91.9632
1500+
$91.0248
2000+
$90.0864
2500+
$89.148
Exquisite packaging
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Enhance your circuit designs with the 2N5660U3 Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2N5660U3 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Microchip Technology to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3
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