2N5729
Microchip Technology
Microchip Technology
POWER BJT
$27.04
Available to order
Reference Price (USD)
1+
$27.04500
500+
$26.77455
1000+
$26.5041
1500+
$26.23365
2000+
$25.9632
2500+
$25.69275
Exquisite packaging
Discount
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Optimize your electronic systems with the 2N5729 Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N5729 delivers superior performance in diverse environments. Microchip Technology's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 2mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 5 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
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