2N6306T1
Microchip Technology
Microchip Technology
POWER BJT
$335.78
Available to order
Reference Price (USD)
1+
$335.77500
500+
$332.41725
1000+
$329.0595
1500+
$325.70175
2000+
$322.344
2500+
$318.98625
Exquisite packaging
Discount
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The 2N6306T1 Bipolar Junction Transistor (BJT) by Microchip Technology is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2N6306T1 provides consistent performance in demanding applications. Choose Microchip Technology for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 250 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: -
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