2N6352P
Microchip Technology
Microchip Technology
POWER BJT
$41.56
Available to order
Reference Price (USD)
1+
$41.56500
500+
$41.14935
1000+
$40.7337
1500+
$40.31805
2000+
$39.9024
2500+
$39.48675
Exquisite packaging
Discount
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Optimize your electronic systems with the 2N6352P Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N6352P delivers superior performance in diverse environments. Microchip Technology's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-3
- Supplier Device Package: TO-66 (TO-213AA)
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