2N6581
Microchip Technology
Microchip Technology
POWER BJT
$106.65
Available to order
Reference Price (USD)
1+
$106.65000
500+
$105.5835
1000+
$104.517
1500+
$103.4505
2000+
$102.384
2500+
$101.3175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N6581 by Microchip Technology is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the 2N6581 ensures efficient and stable operation. Backed by Microchip Technology's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 3mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: -
Related Products
Microchip Technology
JANTX2N2222AUBP/TR
Microchip Technology
JANSL2N5154U3
onsemi
NSS20201DMTTBG
Microchip Technology
JANTXV2N5679
Microchip Technology
JANSL2N2907A
Microchip Technology
JANSL2N2221AUB
Microchip Technology
2N5149
Microchip Technology
JANSD2N4449
Microchip Technology
2N4311
Microchip Technology