2N6666
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 40V 8A TO220
$1.56
Available to order
Reference Price (USD)
1+
$1.56000
500+
$1.5444
1000+
$1.5288
1500+
$1.5132
2000+
$1.4976
2500+
$1.482
Exquisite packaging
Discount
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Enhance your circuit designs with the 2N6666 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2N6666 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
- Power - Max: 65 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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