2N7002A-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-23-3L
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N7002A-F2-0000HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Yangzhou Yangjie Electronic Technology Co.,Ltd for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
SI2300DS-T1-GE3
onsemi
NTF5P03T3G
Goford Semiconductor
GT088N06T
Diodes Incorporated
DMN15H310SK3-13
onsemi
NTD4860NA-1G
STMicroelectronics
STL31N65M5
onsemi
FDPF770N15A
Infineon Technologies
BTS121ANKSA1
Vishay Siliconix
SIA485DJ-T1-GE3
Renesas Electronics America Inc