2N7002BKM,315
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
$0.00
Available to order
Reference Price (USD)
10,000+
$0.07673
30,000+
$0.07178
50,000+
$0.06435
100,000+
$0.06336
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the 2N7002BKM,315 by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 2N7002BKM,315 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883
- Package / Case: SC-101, SOT-883
Related Products
Infineon Technologies
IPI072N10N3GXK
Vishay Siliconix
IRF640STRR
Infineon Technologies
IRL3502STRRPBF
Infineon Technologies
IRFL4310TR
IXYS
IXFQ21N50Q
Harris Corporation
IRF232
Infineon Technologies
IPB60R380P6ATMA1
Micro Commercial Co
MCP55H12-BP
NXP USA Inc.
PHM12NQ20T,518
onsemi