2N7002BKMB,315
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006B-3
$0.00
Available to order
Reference Price (USD)
10,000+
$0.09149
30,000+
$0.08635
50,000+
$0.07862
100,000+
$0.07759
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the 2N7002BKMB,315 by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the 2N7002BKMB,315 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
Related Products
Alpha & Omega Semiconductor Inc.
AO3499
onsemi
NTR4502PT3G
IXYS
IXFH14N100
onsemi
FDB9406L-F085
Diodes Incorporated
ZXM66P02N8TA
IXYS
IXFC96N15P
onsemi
BS170RLRA
onsemi
NVMFS6B05NT1G
IXYS
IXFT16N90Q
Nexperia USA Inc.