2N7002E
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 240MA SOT23-3
$0.00
Available to order
Reference Price (USD)
1+
$0.59000
10+
$0.50700
25+
$0.47400
100+
$0.38160
250+
$0.35520
500+
$0.30240
1,000+
$0.23640
2,500+
$0.21660
5,000+
$0.20340
Exquisite packaging
Discount
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Enhance your electronic projects with the 2N7002E single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's 2N7002E for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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